? 2012 ixys corporation, all rights reserved ds100286a(05/12) high voltage power mosfet features z international standard package z fast intrinsic diode z avalanche rated z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density applications z high voltage power supplies z capacitor discharge applications z pulse circuits IXTH3N150 v dss = 1500v i d25 =3a r ds(on) 7.3 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1500 v v dgr t j = 25 c to 150 c, r gs = 1m 1500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c3a i dm t c = 25 c, pulse width limited by t jm 9a i a t c = 25 c3a e as t c = 25 c 250 mj dv/dt i s i dm , v dd v dss ,t j 150 c 5 v/ns p d t c = 25 c 250 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight 6 g g = gate d = drain s = source tab = drain to-247 g s tab d symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1500 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 10 a t j = 125 c 100 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 7.3 n-channel enhancement mode avalanche rated fast intrinsic diode
ixys reserves the right to change limits, test conditions, and dimensions. IXTH3N150 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note: 1. pulse test, t 300 s, duty cycle, d 2%. e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 2.2 3.6 s c iss 1375 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 90 pf c rss 30 pf t d(on) 19 ns t r 21 ns t d(off) 42 ns t f 25 ns q g(on) 38.6 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 6.5 nc q gd 19.0 nc r thjc 0.50 c/w r thcs 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 3 a i sm repetitive, pulse width limited by t jm 12 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 0.9 s i rm 15.0 a q rm 6.7 c resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 5 (external) i f = i d = 0.5 ? i d25 , -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2012 ixys corporation, all rights reserved IXTH3N150 fig. 1. output characteristics @ t j = 25oc 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 4 8 121620242832 v ds - volts i d - amperes v gs = 10v 7v 4 v 5.5 v 5 v 6 v fig. 2. output characteristics @ t j = 125oc 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 35 40 v ds - volts i d - amperes v gs = 10v 6v 4 v 5v fig. 3. r ds(on) normalized to i d = 1.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 3a i d = 1.5a fig. 4. r ds(on) normalized to i d = 1.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 0.5 1 1.5 2 2.5 3 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTH3N150 fig. 7. transconductance 0 1 2 3 4 5 6 7 0 0.5 1 1.5 2 2.5 3 3.5 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 1 2 3 4 5 6 7 8 9 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = 750v i d = 1.5a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 12. forward-bias safe operating area 0.01 0.1 1 10 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms ixys ref: t_3n150(4n)10-26-10-a
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